Tooted
Plii lõpetamine
Plii lõpetamine
Plii lõpetamine
Peamised tehnilised andmed ：
Hindatud võimsus ： 5-800W ；
Substraadimaterjalid ： beo 、 aln 、 al2O3
Nominaalne takistuse väärtus ： 50Ω
Resistentsuse tolerants ： ± 5%、 、 ± 2%、 、 1%
Keis koefitsient ： ＜ 150 ppm/℃
Operatsiooni temperatuur ： -55 ～+150 ℃
ROHS STANDARD: vastavus
Kohaldatav standard: Q/RFTYTR001-2022
Plii pikkus: L nagu andmelehel täpsustatud
(saab kohandada vastavalt kliendi nõuetele)
| Võimsus(W) | Sagedus | Mõõtmed (ühik: MM) | SubstraatMateriaalne | Andmeleht (PDF) | |||||
| A | B | H | G | W | L | ||||
| 5W | 6 GHz | 4.0 | 4.0 | 1,0 | 1,6 | 1,0 | 3.0 | Al2O3 | RFT50A-05TM0404 |
| 11 GHz | 1.27 | 2.54 | 0,5 | 1,0 | 0,8 | 3.0 | Aln | RFT50N-05TJ1225 | |
| 10W | 4 GHz | 2.5 | 5,0 | 1,0 | 1,9 | 1,0 | 4.0 | Beo | RFT50-10TM2550 |
| 6 GHz | 4.0 | 4.0 | 1,0 | 1,6 | 1,0 | 3.0 | Al2O3 | RFT50A-10TM0404 | |
| 8 GHz | 4.0 | 4.0 | 1,0 | 1,6 | 1,0 | 3.0 | Beo | RFT50-10TM0404 | |
| 10 GHz | 5,0 | 3.5 | 1,0 | 1,9 | 1,0 | 3.0 | Beo | RFT50-10TM5035 | |
| 18 GHz | 5,0 | 2.5 | 1,0 | 1,8 | 1,0 | 3.0 | Beo | RFT50-10TM5023 | |
| 20W | 4 GHz | 2.5 | 5,0 | 1,0 | 1,9 | 1,0 | 4.0 | Beo | RFT50-20TM2550 |
| 6 GHz | 4.0 | 4.0 | 1,0 | 1,6 | 1,0 | 3.0 | Al2O3 | RFT50N-20TJ0404 | |
| 8 GHz | 4.0 | 4.0 | 1,0 | 1,6 | 1,0 | 3.0 | Beo | RFT50-20TM0404 | |
| 10 GHz | 5,0 | 3.5 | 1,0 | 1,9 | 1,0 | 3.0 | Beo | RFT50-20TM5035 | |
| 18 GHz | 5,0 | 2.5 | 1,0 | 1,8 | 1,0 | 3.0 | Beo | RFT50-20TM5023 | |
| 30W | 6 GHz | 6.0 | 6.0 | 1,0 | 1,8 | 1,0 | 5,0 | Aln | RFT50N-30TJ0606 |
| 6.0 | 6.0 | 1,0 | 1,8 | 1,0 | 5,0 | Beo | RFT50-30TM0606 | ||
| 60W | 6 GHz | 6.0 | 6.0 | 1,0 | 1,8 | 1,0 | 5,0 | Aln | RFT50N-60TJ0606 |
| 6.0 | 6.0 | 1,0 | 1,8 | 1,0 | 5,0 | Beo | RFT50-60TM0606 | ||
| 6.35 | 6.35 | 1,0 | 1,8 | 1,0 | 5,0 | Beo | RFT50-60TJ6363 | ||
| 100W | 3 GHz | 6.35 | 9.5 | 1,0 | 1,6 | 1.4 | 5,0 | Aln | RFT50N-100TJ6395 |
| 8,9 | 5.7 | 1,0 | 1,6 | 1,0 | 5,0 | Aln | RFT50N-100TJ8957 | ||
| 9.5 | 9.5 | 1,0 | 1,6 | 1.4 | 5,0 | Beo | RFT50-100TJ9595 | ||
| 4 GHz | 10,0 | 10,0 | 1,0 | 1,8 | 1.4 | 5,0 | Beo | RFT50-100TJ1010 | |
| 6 GHz | 6.35 | 6.35 | 1,0 | 1,8 | 1,0 | 5,0 | Beo | RFT50-100TJ6363 | |
| 8,9 | 5.7 | 1,0 | 1,6 | 1,0 | 5,0 | Aln | RFT50N-100TJ8957B | ||
| 8 GHz | 9.0 | 6.0 | 1,5 | 2.0 | 1,0 | 5,0 | Beo | RFT50-100TJ0906C | |
| 150W | 3 GHz | 6.35 | 9.5 | 1,0 | 1,6 | 1.4 | 5,0 | Aln | RFT50N-150TJ6395 |
| 9.5 | 9.5 | 1,0 | 1,6 | 1.4 | 5,0 | Beo | RFT50-150TJ9595 | ||
| 4 GHz | 10,0 | 10,0 | 1,0 | 1,8 | 1.4 | 5,0 | Beo | RFT50-150TJ1010 | |
| 6 GHz | 10,0 | 10,0 | 1,0 | 1,8 | 1.4 | 5,0 | Beo | RFT50-150TJ1010B | |
| 200W | 3 GHz | 9.5 | 9.5 | 1,0 | 1,6 | 1.4 | 5,0 | Beo | RFT50-200TJ9595 |
| 4 GHz | 10,0 | 10,0 | 1,0 | 1,8 | 1.4 | 5,0 | Beo | RFT50-200TJ1010 | |
| 10 GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5,0 | Beo | RFT50-200TM1313B | |
| 250W | 3 GHz | 12.0 | 10,0 | 1,5 | 2.5 | 1.4 | 5,0 | Beo | RFT50-250TM1210 |
| 10 GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5,0 | Beo | RFT50-250TM1313B | |
| 300W | 3 GHz | 12.0 | 10,0 | 1,5 | 2.5 | 1.4 | 5,0 | Beo | RFT50-300TM1210 |
| 10 GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5,0 | Beo | RFT50-300TM1313B | |
| 400W | 2 GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5,0 | Beo | RFT50-400TM1313 |
| 500W | 2 GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5,0 | Beo | RFT50-500TM1313 |
| 800W | 1 GHz | 25.4 | 25.4 | 3.2 | 4 | 6 | 7 | Beo | RFT50-800TM2525 |
Ülevaade
Plii lõpetamine tehakse, valides sobiva substraadi suuruse ja materjalid, mis põhinevad erinevatel sagedusnõuetel ja energiavajadustel, takistuse, vooluahela printimise ja paagutamise kaudu. Tavaliselt kasutatavad substraadimaterjalid võivad olla peamiselt berülliumoksiid, alumiiniumnitriidi, alumiiniumoksiid või paremad soojuse hajumise materjalid.
Plii lõpetamine, jagunenud õhukeseks kileks ja paksuks kileprotsessiks. See on loodud konkreetsete võimsuse ja sagedusnõuete põhjal ning seejärel töödeldakse protsessi kaudu. Kui teil on erivajadusi, pöörduge kohandamiseks konkreetsete lahenduste pakkumiseks meie müügipersonali poole.
